The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2015
Filed:
Feb. 09, 2010
Applicants:
Sey-ping Sun, Hsinchu, TW;
Tsung-lin Lee, Hsinchu, TW;
Chin-hsiang Lin, Hsinchu, TW;
Chih-hao Chang, Chu-Bei, TW;
Chen-nan Yeh, Sinfong Township, TW;
Chao-an Jong, Hsinchu, TW;
Inventors:
Sey-Ping Sun, Hsinchu, TW;
Tsung-Lin Lee, Hsinchu, TW;
Chin-Hsiang Lin, Hsinchu, TW;
Chih-Hao Chang, Chu-Bei, TW;
Chen-Nan Yeh, Sinfong Township, TW;
Chao-An Jong, Hsinchu, TW;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/768 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76834 (2013.01); H01L 21/76849 (2013.01); H01L 21/76897 (2013.01); H01L 29/66545 (2013.01);
Abstract
A semiconductor device includes a semiconductor substrate; a gate stack overlying the substrate, a spacer formed on sidewalls of the gate stack, and a protection layer overlying the gate stack for filling at least a portion of a space surrounded by the spacer and the top surface of the gate stack. A top surface of the spacer is higher than a top surface of the gate stack.