The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2015
Filed:
Oct. 13, 2011
Cheng-hung Chang, Hsin-Chu, TW;
Yu-rung Hsu, Tainan, TW;
Chen-yi Lee, Keelung, TW;
Shih-ting Hung, Sanchong, TW;
Chen-nan Yeh, Hsi-Chih, TW;
Chen-hua Yu, Hsin-Chu, TW;
Cheng-Hung Chang, Hsin-Chu, TW;
Yu-Rung Hsu, Tainan, TW;
Chen-Yi Lee, Keelung, TW;
Shih-Ting Hung, Sanchong, TW;
Chen-Nan Yeh, Hsi-Chih, TW;
Chen-Hua Yu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of forming a semiconductor structure includes providing a composite substrate, which includes a bulk silicon substrate and a silicon germanium (SiGe) layer over and adjoining the bulk silicon substrate. A first condensation is performed to the SiGe layer to form a condensed SiGe layer, so that the condensed SiGe layer has a substantially uniform germanium concentration. The condensed SiGe layer and a top portion of the bulk silicon substrate are etched to form a composite fin including a silicon fin and a condensed SiGe fin over the silicon fin. The method further includes oxidizing a portion of the silicon fin; and performing a second condensation to the condensed SiGe fin.