The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2014
Filed:
Jul. 31, 2007
Cheng-hung Chang, Hsinchu, TW;
Chen-hua Yu, Hsin-Chu, TW;
Chen-nan Yeh, Hsi-Chih, TW;
Chu-yun Fu, Taipei, TW;
Yu-rang Hsu, Tainan, TW;
Ding-yuan Chen, Taichung, TW;
Cheng-Hung Chang, Hsinchu, TW;
Chen-Hua Yu, Hsin-Chu, TW;
Chen-Nan Yeh, Hsi-Chih, TW;
Chu-Yun Fu, Taipei, TW;
Yu-Rang Hsu, Tainan, TW;
Ding-Yuan Chen, Taichung, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hin-Chu, TW;
Abstract
The present disclosure provides a method of fabricating a FinFET element including providing a substrate including a first fin and a second fin. A first layer is formed on the first fin. The first layer comprises a dopant of a first type. A dopant of a second type is provided to the second fin. High temperature processing of the substrate is performed on the substrate including the formed first layer and the dopant of the second type.