Company Filing History:
Years Active: 2014
Title: Innovations of Yu-Rang Hsu
Introduction
Yu-Rang Hsu is a notable inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of FinFET elements. His innovative approach has led to advancements that are crucial for modern electronic devices.
Latest Patents
Yu-Rang Hsu holds a patent for a "Method of fabrication of a FinFET element." This patent outlines a process that includes providing a substrate with a first fin and a second fin. A first layer is formed on the first fin, which comprises a dopant of a first type. Additionally, a dopant of a second type is provided to the second fin. The method involves high-temperature processing of the substrate, which includes the formed first layer and the dopant of the second type. This innovation is essential for enhancing the performance of FinFET devices.
Career Highlights
Yu-Rang Hsu is associated with Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at this company has allowed him to collaborate with other talented professionals in the field.
Collaborations
Some of his notable coworkers include Cheng-Hung Chang and Chen-Hua Douglas Yu. Their collective expertise contributes to the innovative environment at Taiwan Semiconductor Manufacturing Company Limited.
Conclusion
Yu-Rang Hsu's contributions to semiconductor technology through his patent on FinFET fabrication methods highlight his role as an influential inventor in the industry. His work continues to impact the development of advanced electronic devices.