The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Mar. 13, 2008
Chen-hua Yu, Hsin-Chu, TW;
Yihang Chiu, Toufen, TW;
Shu-tine Yang, Jhubei, TW;
Jyh-cherng Sheu, Hsin-Chu, TW;
Chu-yun Fu, Hsin-Chu, TW;
Cheng-tung Lin, Jhudong, TW;
Chen-Hua Yu, Hsin-Chu, TW;
Yihang Chiu, Toufen, TW;
Shu-Tine Yang, Jhubei, TW;
Jyh-Cherng Sheu, Hsin-Chu, TW;
Chu-Yun Fu, Hsin-Chu, TW;
Cheng-Tung Lin, Jhudong, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of forming a semiconductor structure includes providing a semiconductor substrate; forming a gate dielectric over the semiconductor substrate, wherein the semiconductor substrate and a sidewall of the gate dielectric has a joint point; forming a gate electrode over the gate dielectric; forming a mask layer over the semiconductor substrate and the gate electrode, wherein a first portion of the mask layer adjacent the joint point is at least thinner than a second portion of the mask layer away from the joint point; after the step of forming the mask layer, performing a halo/pocket implantation to introduce a halo/pocket impurity into the semiconductor substrate; and removing the mask layer after the halo/pocket implantation.