The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2013
Filed:
Feb. 25, 2013
Tze-liang Lee, Hsinchu, TW;
Pei-ren Jeng, Chu-Bei, TW;
Chu-yun Fu, Hsinchu, TW;
Chyi Shyuan Chern, Taipei, TW;
Jui-hei Huang, Yongkang, TW;
Chih-tang Peng, Taipei, TW;
Hao-ming Lien, Hsinchu, TW;
Tze-Liang Lee, Hsinchu, TW;
Pei-Ren Jeng, Chu-Bei, TW;
Chu-Yun Fu, Hsinchu, TW;
Chyi Shyuan Chern, Taipei, TW;
Jui-Hei Huang, Yongkang, TW;
Chih-Tang Peng, Taipei, TW;
Hao-Ming Lien, Hsinchu, TW;
Abstract
A method of fabricating an isolation structure including forming a trench in a top surface of a substrate and partially filling the trench with a first oxide, wherein the first oxide is a pure oxide. Partially filling the trench includes forming a liner layer in the trench and forming the first oxide over the liner layer using silane and oxygen precursors at a pressure less than 10 milliTorr (mTorr) and a temperature ranging from about 500° C. to about 1000° C. The method further includes producing a solid reaction product in a top portion of the first oxide. The method further includes sublimating the solid reaction product by heating the substrate in a chamber at a temperature from 100° C. to 200° C. and removing the sublimated solid reaction product by flowing a carrier gas over the substrate. The method further includes filling the trench with a second oxide.