Chin-Yuan Tseng

This inventor holds 23 USPTO granted patents and 1 published patent application, primarily in Semiconductor Fabrication. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2016-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chin-Yuan Tseng. Retrieved from https://idiyas.com/inventor/chin-yuan-tseng

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 23 (Patent Applications = 1)

% Patents Active = 91.3

Average Co-Inventor Count = 6.7

ph-index = 4

Forward Citations = 41(Granted Patents)

Location History:

Taipei, TW (2019 - 2023)
Hsin-Chu, TW (2016 - 2024)

Company Filing History:

23 out of 42,872

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2016-2026

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Areas of Expertise:

Fin Patterning

High-Density Devices

Lithographic Techniques

Integrated Circuit Manufacturing

Self-Assembly

Process Margins

Semiconductor Structure

Field Effect Transistors

23 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12672946 - Method of making semiconductor device which includes Fins (2026-07-07),

2. 11901190 - Method of patterning (2024-02-13),

3. 11848208 - Method for forming semiconductor device structure (2023-12-19),

4. 11616067 - Method of making semiconductor device which includes Fins (2023-03-28),

5. 11532482 - High-density semiconductor device (2022-12-20),

6. 11437239 - Method for forming semiconductor device structure (2022-09-06),

7. 11222899 - Semiconductor device which includes fins and method of making same (2022-01-11),

8. 11081354 - Fin patterning methods for increased process margins (2021-08-03),

9. 10971363 - Method for forming semiconductor device structure (2021-04-06),

10. 10957551 - Fin-like field effect transistor patterning methods for increasing process margins (2021-03-23),

11. 10950456 - High-density semiconductor device (2021-03-16),

12. 10714485 - Semiconductor device which includes Fins (2020-07-14),

13. 10535520 - Fin patterning methods for increased process margins (2020-01-14),

14. 10497565 - Method for forming semiconductor device structure (2019-12-03),

15. 10446406 - High-density semiconductor device (2019-10-15),

Title: Chin-Yuan Tseng: A Pioneer in Semiconductor Innovations

Introduction

Chin-Yuan Tseng is a notable inventor based in Hsinchu, Taiwan, recognized for his significant contributions to the semiconductor industry. With an impressive portfolio of 22 patents, Tseng has been instrumental in advancing technology through his innovative methods.

Latest Patents

Tseng's recent patents focus on enhancing semiconductor fabrications. One of his prominent innovations is a method of patterning, aimed at reducing corner rounding during substrate patterning to create precise shapes. This method involves dividing a pattern into two parts, allowing for improved edge qualification and reducing imperfections during the etching process. Additionally, he has developed a method for forming semiconductor device structures, which outlines a process that includes creating spacers and a filling layer to ensure structural integrity and precision in semiconductor manufacturing.

Career Highlights

Chin-Yuan Tseng currently works at Taiwan Semiconductor Manufacturing Company Limited (TSMC), one of the leading firms in the semiconductor sector. His dedication to research and innovation has culminated in a diverse array of patents, each contributing to the efficiency and effectiveness of semiconductor technologies.

Collaborations

Throughout his career, Tseng has collaborated with esteemed professionals such as Ru-Gun Liu and Wei-Liang Lin. Their collective expertise has fostered an environment ripe for innovation, furthering the frontiers of semiconductor technology at TSMC.

Conclusion

Chin-Yuan Tseng's contributions to the field of semiconductors through his inventive patents and collaborations with other industry experts illustrate his pivotal role in driving forward technological advancements. His innovative methodologies not only enhance the manufacturing process but also set new standards within the industry.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

1 patent pending: