The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2024
Filed:
Apr. 30, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chin-Yuan Tseng, Hsinchu, TW;
Yu-Tien Shen, Tainan, TW;
Wei-Liang Lin, Hsin-Chu, TW;
Chih-Ming Lai, Hsinchu, TW;
Kuo-Cheng Ching, Hsinchu County, TW;
Shi Ning Ju, Hsinchu, TW;
Li-Te Lin, Hsinchu, TW;
Ru-Gun Liu, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinhcu, TW;
Abstract
A method of reducing corner rounding during patterning of a substrate to form a prescribed pattern comprising a corner includes dividing the pattern into a first pattern and a second pattern, the first pattern forming a first edge of the corner and the second pattern forming a second edge of the corner. At least a portion of the second pattern overlaps the first pattern such that the first edge intersects with the second edge to form a corner of the prescribed pattern. The method further includes forming the first pattern in a first mask layer disposed on a substrate to expose the substrate and forming the second pattern in the first mask layer to expose the substrate. The substrate exposed through the first mask layer is then etched to obtain the pattern.