The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2020

Filed:

Sep. 10, 2018
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chih-Liang Chen, Hsinchu, TW;

Chih-Ming Lai, Hsinchu, TW;

Charles Chew-Yuen Young, Cupertino, CA (US);

Chin-Yuan Tseng, Hsinchu, TW;

Jiann-Tyng Tzeng, Hsinchu, TW;

Kam-Tou Sio, Zhubei, TW;

Ru-Gun Liu, Zhubei, TW;

Wei-Liang Lin, Hsinchu, TW;

L. C. Chou, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 21/308 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1104 (2013.01); H01L 21/3083 (2013.01); H01L 21/3086 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H01L 21/31144 (2013.01);
Abstract

A semiconductor device including multiple fins. At least a first set of fins among the multiple fins is substantially parallel. At least a second set of fins among the multiple fins is substantially collinear. For any given first and second fins of the multiple fins having corresponding first and second fin-thicknesses, the second fin-thickness is less than plus or minus about 50% of the first fin-thickness.


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