The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2020

Filed:

Aug. 23, 2017
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chin-Yuan Tseng, Hsinchu, TW;

Wei-Liang Lin, Hsin-Chu, TW;

Li-Te Lin, Hsinchu, TW;

Ru-Gun Liu, Hsinchu County, TW;

Min Cao, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/308 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0338 (2013.01); H01L 21/0332 (2013.01); H01L 21/0335 (2013.01); H01L 21/0337 (2013.01); H01L 21/3086 (2013.01); H01L 21/823431 (2013.01); H01L 21/823821 (2013.01); H01L 29/41791 (2013.01); H01L 29/6656 (2013.01); H01L 29/66795 (2013.01);
Abstract

The present disclosure provides a method in accordance with some embodiments. The method includes forming a material layer that includes an array of fin features, wherein at least one fin feature has a first material on a first sidewall and a second material on a second sidewall that is opposite to the first sidewall, wherein the first material is different from the second material. The method further includes exposing the second sidewall of the at least one fin feature and removing the at least one fin feature.


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