The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2022
Filed:
Feb. 09, 2021
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Lei-Chun Chou, Taipei, TW;
Chih-Liang Chen, Hsinchu, TW;
Chih-Ming Lai, Hsinchu, TW;
Charles Chew-Yuen Young, Cupertino, CA (US);
Chin-Yuan Tseng, Hsinchu, TW;
Hsin-Chih Chen, New Taipei, TW;
Shi Ning Ju, Hsinchu, TW;
Jiann-Tyng Tzeng, Hsinchu, TW;
Kam-Tou Sio, Hsinchu County, TW;
Ru-Gun Liu, Hsinchu County, TW;
Wei-Cheng Lin, Taichung, TW;
Wei-Liang Lin, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Abstract
A method of manufacturing a semiconductor device includes depositing a first material on a substrate, depositing on the substrate a second material that has an etch selectivity different from an etch selectively of the first material, depositing a spacer material on the first and second material, and etching the substrate using the spacer material as an etch mask to form a fin under the first material and a fin under the second material.