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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11437239 B1

PDFFull Text
Date of Patent:
Sep. 06, 2022

Filed:

Apr. 01, 2021

Method for forming semiconductor device structure

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chih-Ming Lai, Hsinchu, TW;

Shih-Ming Chang, Zhubei, TW;

Wei-Liang Lin, Hsinchu, TW;

Chin-Yuan Tseng, Taipei, TW;

Ru-Gun Liu, Zhubei, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

McClure, Qualey & Rodack, LLP

Primary Examiner:

Shamim Ahmed

Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); H01L 21/0332 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01);
Abstract

A method for forming a semiconductor device structure is provided. The method includes forming a first layer over a substrate. The first layer has a trench. The method includes forming a first spacer and a second spacer respectively over opposite inner walls of the trench. The first spacer and the second spacer are spaced apart from each other. The method includes removing a first portion of the first spacer to form a first gap in the first spacer, wherein a first part and a second part of the first spacer are spaced apart by the first gap, and the first gap communicates with the trench. The method includes forming a filling layer into the trench and the first gap to cover the first spacer and the second spacer. The filling layer, the first spacer, and the second spacer together form a strip structure. The method includes removing the first layer.

Find Patent Forward Citations

Lai, Chih-Ming. (2022). Method for forming semiconductor device structure (U.S. Patent No. 11437239). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11437239

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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