The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 03, 2021

Filed:

Dec. 23, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Chin-Yuan Tseng, Hsinchu, TW;

Wei-Liang Lin, Hsin-Chu, TW;

Li-Te Lin, Hsinchu, TW;

Ru-Gun Liu, Hsinchu County, TW;

Min Cao, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/308 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0338 (2013.01); H01L 21/0332 (2013.01); H01L 21/0335 (2013.01); H01L 21/0337 (2013.01); H01L 21/3086 (2013.01); H01L 21/823431 (2013.01); H01L 21/823821 (2013.01); H01L 29/41791 (2013.01); H01L 29/6656 (2013.01); H01L 29/66795 (2013.01);
Abstract

The present disclosure provides a method in accordance with some embodiments. The method includes forming a mandrel over a substrate, the mandrel having a first sidewall and a second sidewall opposing the first sidewall; forming a first fin on the first sidewall and a second fin on the second sidewall; depositing a dielectric material covering the first fin, the second fin, and the mandrel; partially removing the dielectric material, thereby exposing the second fin; etching the second fin without etching the first fin and the mandrel; removing the dielectric material; and removing the mandrel.


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