The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 11, 2022

Filed:

Jul. 01, 2020
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chih-Liang Chen, Hsinchu, TW;

Chih-Ming Lai, Hsinchu, TW;

Charles Chew-Yuen Young, Cupertino, CA (US);

Chin-Yuan Tseng, Hsinchu, TW;

Jiann-Tyng Tzeng, Hsinchu, TW;

Kam-Tou Sio, Zhubei, TW;

Ru-Gun Liu, Zhubei, TW;

Wei-Liang Lin, Hsinchu, TW;

L. C. Chou, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 21/308 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1104 (2013.01); H01L 21/3083 (2013.01); H01L 21/3086 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H01L 21/31144 (2013.01);
Abstract

A semiconductor device including fins arranged so that: in a situation in which any given first one of the fins (first given fin) is immediately adjacent any given second one of the fins (second given fin), and subject to fabrication tolerance, there is a minimum gap, Gmin, between the first and second given fins; and the first and second given fins a minimum pitch, Pmin, that falls in a range as follows: (G+(≈90%)*T1)≤P≤(G+(≈110%)*T1).


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