The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2026
Filed:
Mar. 27, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chih-Liang Chen, Hsinchu, TW;
Chih-Ming Lai, Hsinchu, TW;
Charles Chew-Yuen Young, Hsinchu, TW;
Chin-Yuan Tseng, Hsinchu, TW;
Jiann-Tyng Tzeng, Hsinchu, TW;
Kam-Tou Sio, Hsinchu, TW;
Ru-Gun Liu, Hsinchu, TW;
Wei-Liang Lin, Hsinchu, TW;
L. C. Chou, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method (of manufacturing fins for a semiconductor device) includes: forming semiconductor fins including ones thereof having a first cap with a first etch sensitivity (first capped fins) and second ones thereof having a second cap with a second etch sensitivity (second capped fins), the first and second etch sensitivities being different; and eliminating selected ones of the first capped fins and selected ones of the second capped fins.