The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2023
Filed:
Aug. 09, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chih-Ming Lai, Hsinchu, TW;
Shih-Ming Chang, Hsinchu, TW;
Wei-Liang Lin, Hsin-Chu, TW;
Chin-Yuan Tseng, Taipei, TW;
Ru-Gun Liu, Zhubei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD, Hsinchu, TW;
Abstract
A method for forming a semiconductor device structure is provided. The method includes forming a first spacer over a substrate. The method includes partially removing the first spacer to form a gap dividing the first spacer into a first part and a second part. The method includes forming a filling layer covering a first top surface and a first sidewall of the first spacer. The filling layer and the first spacer together form a strip structure. The method includes forming a second spacer over a second sidewall of the strip structure. The method includes forming a third spacer over a third sidewall of the second spacer. The third spacer is narrower than the second spacer.