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Chi-Yen Lin

This inventor holds 34 USPTO granted patents and 2 published patent applications, primarily in Semiconductor Technology. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2012-2026.

USPTO Granted Patents = 34 (Patent Applications = 2)

% Patents Active = 64.7

Average Co-Inventor Count = 3.6

ph-index = 5

Forward Citations = 61(Granted Patents)

Location History:

Hsinchu, TW (2023)
Tainan, TW (2012 - 2024)

Company Filing History:

32 out of 42,711

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

2 out of 450

Taiwan Semiconductor Manufacturing Co., Ltd.

patents

Years Active: 2012-2026

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Areas of Expertise:

Integrated Circuit

Memory Device

SRAM Structure

Semiconductor Structure

Data Retention

Surface Treatment

Metal Silicide Layer

V-Shaped Region

Doped SiGe

Capacitor Device

Wafer Test Line

Optical Proximity Correction

34 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12648498 - Surface treatment in integrated circuit package and method (2026-06-02),

2. 12543317 - Memory device with improved data retention (2026-02-03),

3. 12381166 - Method of making semiconductor structure including buffer layer (2025-08-05),

4. 12183793 - Method for forming semiconductor device structure with metal-semiconductor compound layer (2024-12-31),

5. 12052851 - Integrated circuit structure for low power SRAM (2024-07-30),

6. 11810879 - Semiconductor structure including buffer layer (2023-11-07),

7. 11653498 - Memory device with improved data retention (2023-05-16),

8. 11462550 - SRAM structure (2022-10-04),

9. 11309268 - Method of designing a layout, method of making a semiconductor structure and semiconductor structure (2022-04-19),

10. 11101354 - Method for forming semiconductor device structure with metal silicide layer (2021-08-24),

11. 10748911 - Integrated circuit for low power SRAM (2020-08-18),

12. 10734489 - Method for forming semiconductor device structure with metal silicide layer (2020-08-04),

13. 10727191 - Semiconductor device with post passivation structure (2020-07-28),

14. 10163831 - Semiconductor device with post passivation structure and fabrication method therefor (2018-12-25),

15. 10158004 - Source/drain recess volume trim for improved device performance and layout dependence (2018-12-18),

Title: The Innovative Journey of Chi-Yen Lin

Introduction: Chi-Yen Lin, a pioneering inventor hailing from Tainan, Taiwan, has made significant contributions to the field of technology with her groundbreaking inventions and patents.

Latest Patents: Chi-Yen Lin's most recent patents include advancements in renewable energy technology, specifically in the development of solar panel efficiency and energy storage solutions.

Career Highlights: With a career spanning over two decades, Chi-Yen Lin has established herself as a leading figure in the tech industry. Her innovative spirit and dedication to research have led to numerous patents that have shaped the landscape of renewable energy and sustainable technology.

Collaborations: Throughout her career, Chi-Yen Lin has collaborated with various research institutions, universities, and tech companies to further her inventions and bring them to market. Her partnerships have been instrumental in the successful implementation of her groundbreaking ideas.

Conclusion: Chi-Yen Lin's passion for innovation and commitment to creating a more sustainable future through technology make her a true trailblazer in the world of inventions. Her work continues to inspire and drive progress in the field of renewable energy and beyond.

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