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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12052851 B1

PDFFull Text
Date of Patent:
Jul. 30, 2024

Filed:

Aug. 10, 2022

Integrated circuit structure for low power sram

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Gulbagh Singh, Uttar Pradesh, IN;

Shun-Chi Tsai, Tainan, TW;

Chih-Ming Lee, Tainan, TW;

Chi-Yen Lin, Tainan, TW;

Kuo-Hung Lo, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Maschoff Brennan

Primary Examiner:

Eric A Ward

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/8234 (2006.01); H01L 29/423 (2006.01); H10B 10/00 (2023.01); G11C 11/412 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H10B 10/12 (2023.02); H01L 21/823475 (2013.01); H01L 29/0649 (2013.01); H01L 29/4238 (2013.01); G11C 11/412 (2013.01); H01L 27/0207 (2013.01);
Abstract

An IC structure includes a first gate strip and a first active region under the first gate strip and forming a first transistor with the first gate strip. From a top view, the first active region has opposite short sides and opposite long sides connecting the short sides and longer than the short sides. First one of the long sides has a first stepped top-view profile. Second one of the long sides has a second stepped top-view profile. The first stepped top-view profile has more step rises than the second stepped top-view profile.

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