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For the Inventor, By the Inventor

Hsinchu, Taiwan

Kuo-Hung Lo

USPTO Granted Patents = 17 

Average Co-Inventor Count = 4.5

ph-index = 3

Forward Citations = 21(Granted Patents)


Location History:

  • Shin-Chu, TW (2019)
  • Hsinchu, TW (2019 - 2024)

Company Filing History:

goldMedal17 out of 41,004 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2019-2025

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17 patents (USPTO):Explore Patents
1. 12193205 - Memory device and manufacturing method (2025-01-07),
2. 12082388 - Eight-transistor static random access memory, layout thereof, and method for manufacturing the same (2024-09-03),
3. 12052851 - Integrated circuit structure for low power SRAM (2024-07-30),
4. 11864368 - Static random access memory cell (2024-01-02),
5. 11832429 - Eight-transistor static random access memory, layout thereof, and method for manufacturing the same (2023-11-28),
6. 11683924 - Memory device and manufacturing method (2023-06-20),
7. 11641729 - Manufacturing method of static random access memory cell (2023-05-02),
8. 11462550 - SRAM structure (2022-10-04),
9. 11355499 - Static random access memory cell (2022-06-07),
10. 11282842 - Memory device and manufacturing method (2022-03-22),
11. 10872896 - Eight-transistor static random access memory, layout thereof, and method for manufacturing the same (2020-12-22),
12. 10868019 - Semiconductor device having strap cell (2020-12-15),
13. 10840251 - Memory device and manufacturing method (2020-11-17),
14. 10748911 - Integrated circuit for low power SRAM (2020-08-18),
15. 10672775 - Semiconductor device having strap cell (2020-06-02),

Title: Innovator Spotlight: Kuo-Hung Lo Revolutionizing SRAM Technology

Introduction:

Meet Kuo-Hung Lo, a brilliant inventor based in Hsinchu, TW, who has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 14 patents, Kuo-Hung Lo is a trailblazer in the world of innovation.

Latest Patents:

Kuo-Hung Lo's recent patents showcase his expertise in Static Random Access Memory (SRAM) cells. His groundbreaking work includes the invention of a novel SRAM cell design featuring unique semiconductor fins and gate structures. The precise engineering of these components results in improved performance and efficiency, setting a new standard in semiconductor memory technology.

Career Highlights:

Currently employed at Taiwan Semiconductor Manufacturing Company Limited (TSMC), Kuo-Hung Lo continues to push the boundaries of semiconductor design. His dedication to innovation and technical excellence has earned him a reputation as a leading expert in the industry. Through his research and inventions, Kuo-Hung Lo is shaping the future of semiconductor technology.

Collaborations:

In his professional journey, Kuo-Hung Lo has collaborated with esteemed colleagues such as Shau-Wei Lu and Ping-Wei Wang. Together, they have worked on cutting-edge projects and shared their expertise to drive innovation forward. Kuo-Hung Lo's collaborative spirit and willingness to work with others highlight his commitment to progress and collective success.

Conclusion:

In conclusion, Kuo-Hung Lo stands out as a visionary inventor, shaping the landscape of semiconductor technology with his groundbreaking patents and contributions. His dedication to innovation, coupled with his collaborative approach, positions him as a key player in the field. The world eagerly anticipates the next wave of innovations that Kuo-Hung Lo will bring to the table, further solidifying his legacy in the realm of technology and invention.

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