The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 15, 2020

Filed:

May. 05, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Kuo-Hung Lo, Hsinchu, TW;

Feng-Ming Chang, Zhubei, TW;

Ying-Hsiu Kuo, Hsinchu, TW;

Ping-Wei Wang, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01); H01L 23/52 (2006.01); H01L 23/528 (2006.01); G11C 11/412 (2006.01); H01L 27/092 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1104 (2013.01); G11C 11/412 (2013.01); H01L 23/528 (2013.01); H01L 27/0924 (2013.01); H01L 27/0928 (2013.01); H01L 29/1083 (2013.01);
Abstract

A semiconductor device includes: a first well having a first conductivity-type extending along a first direction; second and third wells having a second conductivity-type and disposed on opposite sides of the first well in a second direction; a first array of bitcells and a second array of bitcells disposed on the first to third wells; a strap cell disposed on the first to third wells and between the first and second arrays and including first and second well pickup regions having the first conductivity-type, disposed on the first well, and spaced-apart from each other in the first direction, and third and fourth well pickup regions having the second conductivity-type and disposed on the second and third wells, respectively; first and second conductive patterns electrically connected to the first and second well pickup regions, respectively; and a third conductive pattern electrically connected to the third and fourth well pickup regions.


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