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For the Inventor, By the Inventor

Zhubei, Taiwan

Feng-Ming Chang

This inventor holds 94 USPTO granted patents and 53 published patent applications and 1 EPO patent, primarily in Semiconductor Memory (CPC class H01L27-1104). Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Wistron Neweb Corporation, Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2009-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Feng-Ming Chang. Retrieved from https://idiyas.com/inventor/feng-ming-chang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 94 

% Patents Active = 89.4

 

Average Co-Inventor Count = 3.7

ph-index = 7

Forward Citations = 374(Granted Patents)

Forward Citations (Not Self Cited) = 330(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Chia-yi, TW (2009 - 2015)
  • Zhubei, CN (2020)
  • Hsinchu, TW (2015 - 2024)
  • Zhubei, TW (2016 - 2024)
  • Hsinchu County, TW (2016 - 2024)
  • Zhongli, TW (2024)

Company Filing History:

goldMedal88 out of 42,965 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal4 out of 792 
 
Wistron Neweb Corporation
 patents
bronzeMedal2 out of 503 
 
Taiwan Semiconductor Manufacturing Co., Ltd.
 patents

Years Active: 2009-2026

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Areas of Expertise:
Semiconductor Device
SRAM Design
Memory Device
Integrated Circuit
Multi-Port SRAM
Backside Metal Tracks
Memory Performance
Layout Optimization
Static RAM
Interconnect Structures
Coupling Capacitance
Write Assist Circuit
94 patents (USPTO):Explore Patents
1. 12759114 - Carrying device (2026-10-13),
2. 12740037 - Memory device and method for manufacturing the same (2026-09-15),
3. D1144304 - Network communication device (2026-08-25),
4. 12720719 - Varying the PO space in semiconductor layouts (2026-08-25),
5. 12701735 - Isolation structures (2026-08-04),
6. 12694927 - Multi-port SRAM structures with cell size optimization (2026-07-28),
7. 12666940 - Semiconductor structure and method for forming the same (2026-06-23),
8. 12666587 - Memory devices with a backside read bit line (2026-06-23),
9. 12660149 - Interconnect structures for integration of memory cells and logic cells (2026-06-16),
10. 12657368 - Space optimization between SRAM cells and standard cells (2026-06-16),
11. 12653015 - SRAM middle strap with feedthrough via (2026-06-09),
12. 12641767 - Multi-port SRAM structure with gate-all-around transistors (2026-05-26),
13. 12604521 - Semiconductor device and manufacturing method thereof (2026-04-14),
14. 12588182 - Multi-port SRAM cell with metal interconnect structures (2026-03-24),
15. 12588180 - Four-poly-pitch SRAM cell with backside metal tracks (2026-03-24),

Title: Innovations and Contributions of Feng-Ming Chang

Introduction

Feng-Ming Chang, an accomplished inventor based in Zhubei, Taiwan, holds an impressive portfolio of 72 patents. His innovative work primarily focuses on memory devices and structures, significantly advancing the field of semiconductor technology.

Latest Patents

Chang's latest inventions include a memory device that features an array of bit cells alongside tracking cells. This memory device is designed to enhance both read and write tracking operations, improving efficiency and performance. Additionally, he has developed a compact static random-access memory (SRAM) structure. This SRAM structure includes a unique layout involving source/drain features and vias that optimize the storage capabilities of the memory cells, marking a notable contribution to memory technology.

Career Highlights

Throughout his career, Feng-Ming Chang has been associated with leading companies in the semiconductor industry, including Taiwan Semiconductor Manufacturing Company Ltd. and Wistron Neweb Corporation. His expertise and innovative spirit have been pivotal in the development of cutting-edge technologies that are instrumental to the industry today.

Collaborations

Chang has worked alongside esteemed colleagues such as Ping-Wei Wang and Kuo-Hsiu Hsu. Their collaborative efforts contribute to significant advancements in memory technologies, showcasing the importance of teamwork in driving innovation within the sector.

Conclusion

Feng-Ming Chang's contributions to the field of memory devices and semiconductor technology are noteworthy. With a substantial number of patents to his name, his work continues to influence future innovations in the industry. His dedication to enhancing memory solutions exemplifies the spirit of innovation, inspiring the next generation of inventors and engineers.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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