Yokohama, Japan

Yoshiaki Fukuzumi

Average Co-Inventor Count = 3.2

ph-index = 32

Forward Citations = 4,358(Granted Patents)

Forward Citations (Not Self Cited) = 3,728(Sep 21, 2024)

DiyaCoin DiyaCoin 11.11 

Inventors with similar research interests:


Location History:

  • Yokosuka, JP (2000 - 2001)
  • Tokyo 1-5-8001, JP (2003)
  • Kawasaki, JP (2004)
  • Palo Alto, CA (US) (2008)
  • Tokyo, JP (2012)
  • Kanagawag-ken, JP (2013)
  • Mie-ken, JP (2015)
  • Mie, JP (2015)
  • Kanagawa-ken, JP (2010 - 2019)
  • Yokohama, JP (2001 - 2024)
  • Kanagawa, JP (2006 - 2024)
  • Yokkaichi, JP (2015 - 2024)
  • Yokkaichi Mie, JP (2024)


Years Active: 2000-2025

where 'Filed Patents' based on already Granted Patents

288 patents (USPTO):

Title: Yoshiaki Fukuzumi: Paving the Way for Semiconductor Memory Innovations

Introduction:

Yoshiaki Fukuzumi, a distinguished inventor hailing from Yokohama, Japan, has made significant contributions to the field of semiconductor memory devices. With an impressive portfolio comprising 257 patents, Fukuzumi's inventive prowess and dedication to technological advancements have reshaped the way we store and access data. This article explores Fukuzumi's latest patents, notable career highlights, and collaborations with industry-leading companies.

Latest Patents:

Fukuzumi's recent innovations demonstrate his commitment to improving non-volatile memory devices. One such patent is titled "Non-volatile Memory Device Having at Least One Metal and One Semiconductor Body Extending through the Electrode Stack." This invention introduces a novel architecture that incorporates a semiconductor layer extending through electrodes and interconnected layers, enabling enhanced electrical connections and improved memory film integration.

Another significant patent by Fukuzumi is "Semiconductor Memory Device and Method for Manufacturing the Same." This invention presents a semiconductor memory device featuring multiple semiconductor pillars arranged in various directions, connected to a connecting member. The method ensures efficient data storage and retrieval through the strategic placement of charge storage layers among the stacked electrodes and insulating films.

Career Highlights:

Throughout his career, Fukuzumi has worked for prominent companies within the industry. He has contributed his expertise to the renowned corporations, Kabushiki Kaisha Toshiba and Toshiba Memory Corporation. Fukuzumi's affiliation with these organizations highlights his dedication to pushing the boundaries of innovation in semiconductor memory technologies.

Collaborations:

In his innovative journey, Fukuzumi had the opportunity to collaborate with several accomplished professionals. Among his notable coworkers, Hideaki Aochi and Masaru Kito have played pivotal roles in advancing the field of semiconductor memory devices. Their collective efforts have resulted in groundbreaking inventions and have contributed significantly to the growth and development of the industry.

Conclusion:

Yoshiaki Fukuzumi's extensive patent portfolio and inventive achievements attest to his significant contributions to the field of semiconductor memory devices. His latest patents embody his dedication to improving non-volatile memory technologies and optimizing data storage processes. Collaborations with industry-leading companies and peers further underscore Fukuzumi's expertise and impact within the field. As we continue to witness the evolution of memory devices, Fukuzumi's contributions stand as a testament to the power of innovation in shaping the future of technology.

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