Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Kioxia Corporation

Micron Technology Incorporated

Other

Lodestar Licensing Group LLC

Fujitsu Limited Kabushiki Kaisha Toshiba

Yoshiaki Fukuzumi

Hideaki Aochi

Masaru Kito

Ryota Katsumata

Hiroyasu Tanaka

Masaru Kidoh

Megumi Ishiduki

Yosuke Komori

Tomoko Fujiwara

Ryouhei Kirisawa

Yasuyuki Matsuoka

Junya Matsunami

Yoshimasa Mikajiri

Shigeto Oota

Masaki Tsuji

Jun Fujiki

Mitsuru Sato

Akihiro Nitayama

Tadashi Kai

Yoshihiko Kamata

Yusuke Kohyama

Shuji Tanaka

Yoshihisa Iwata

Shinya Arai

Koji Asakawa

Masahiko Nakayama

Richard J Hill

Hideyuki Nishizawa

Hirofumi Morise

Masanobu Saito

Shigeki Hattori

Masaya Terai

Sumio Ikegawa

Masashi Yoshida

Takeshi Imamura

Tatsuya Kishi

Toshihiko Nagase

Paolo Tessariol

Takayuki Okada

Tsukasa Tada

Tomoharu Tanaka

Hiroaki Yoda

Hideaki Fukuzawa

Akira Kikitsu

Ichiro Mizushima

Naoki Yasuda

Matthew J King

Shinji Mori

Satoshi Mikoshiba

Shiho Nakamura

Reika Ichihara

Kenichiro Yoshii

Tsuyoshi Kondo

David A Daycock

Kazushige Kawasaki

Tomoya Sanuki

Fumiki Aiso

Albert Fayrushin

Chandra S Tiwari

Hiroyuki Nitta

Tomoo Hishida

Hiroyuki Fuke

Kiyotaro Itagaki

David H Wells

Lifang Xu

Koichi Kawai

Shunji Nakamura

Takuya Shimada

Emilio Camerlenghi

Akiyoshi Hatada

Lars P Heineck

Yoshio Ozawa

Atsushi Fukumoto

Yoshiaki Asao

Ching-Huang Lu

Masumi Saitoh

Kenji Tsuchida

Tsuneo Inaba

Hiroshi Kanno

Takeshi Kajiyama

Kazuyuki Higashi

Indra V Chary

Naomi Shida

Tomoko Ogura Iwasaki

Kiyotaka Miyano

Hajime Nagano

Collin Howder

Akira Goda

Kunal Shrotri

Masakazu Yamagiwa

Shigeki Takahashi

Adam L Olson

Kenji Todori

Mitsuhiro Omura

Reiko Yoshimura

Takeshi Hioka

Pitamber Shukla

Hiroki Yamashita

Erwin E Yu

Harsh Narendrakumar Jain

Arrays of memory cells including a data line, a common source, a conductive element between the data line and the common source, a first string of series-connected memory cells having a first segment of series-connected memory cells selectively connected to the conductive element and a second segment of series-connected memory cells selectively connected to the conductive element and selectively connected to its first segment of series-connected memory cells through the conductive element, and a second string of series-connected memory cells having a first segment of series-connected memory cells selectively connected to the conductive element and a second segment of series-connected memory cells selectively connected to the conductive element and selectively connected to its first segment of series-connected memory cells through the conductive element, as well as apparatus containing such arrays of memory cells and methods of their operation, and methods of their formation.

Memory arrays having multiple strings of series-connected memory cells selectively connected in parallel, their fabrication, and their operation

Methods, systems, and devices for techniques for concurrently-formed cavities in three-dimensional memory arrays are described. As part of forming a memory die, a plurality of cavities may be formed by a set of one or more material removal operations, and different subsets of the plurality of cavities may be used to form different features of the memory die. In some examples, a sacrificial region may be formed in accordance with one or more material addition or removal operations, and such a sacrificial region may include openings that support the formation of various structures of a memory device. After the formation of such structures, the sacrificial region may be isolated from an active region by merging a subset of the previously-formed plurality of cavities.

Techniques for concurrently-formed cavities in three-dimensional memory arrays

A memory device includes an array of strings of memory cells, a local bitline coupled with a plurality of the strings of memory cells, and a sense transistor having a gate terminal coupled with the local bitline. The memory device further includes a series of transistors have a data read path between a source line and the sense transistor and between the sense transistor and a global bitline that is coupled with a page buffer. A micropump is integrated within the series of transistors. Control logic is coupled with the series of transistors and to, during a read operation of a memory cell of the array and in response to the sense transistor turning on, activate the micropump to cause a constant read current to flow between the global bitline and the source line.

Capacitive sensing with a micro pump in a memory device

Memory circuitry comprising strings of memory cells comprising memory blocks individually comprises a vertical stack comprising alternating insulative tiers and conductive tiers. Channel-material strings of memory cells extend through the insulative tiers and the conductive tiers in a memory-array region. The insulative tiers and the conductive tiers of the memory blocks extend from the memory-array region into a stair-step region. Individual of the memory blocks in the stair-step region comprise a flight of operative stairs. Individual of the operative stairs comprise one of the conductive tiers. At least some immediately-laterally-adjacent of the individual memory blocks in the stair-step region have their flights of operative stairs laterally-separated by a stack comprising two vertically-alternating different-composition insulative materials. Other embodiments, including method, are disclosed.

Memory circuitry comprising strings of memory cells and method used in forming a memory array comprising strings of memory cells

A semiconductor memory device includes a plurality of electrode layers stacked above a first semiconductor layer, a second semiconductor layer and a first film. The second semiconductor layer extends through the plurality of electrode layers in a stacking direction of the plurality of electrode layers. The second semiconductor layer includes an end portion inside the first semiconductor layer. The first film is positioned inside the first semiconductor layer and contacts the first semiconductor layer. The first semiconductor layer includes a first portion, a second portion, and a third portion. The first film is positioned between the first portion and the second portion. The third portion links the first portion and the second portion. The third portion is positioned between the first film and the second semiconductor layer. The second semiconductor layer includes a contact portion contacting the third portion of the first semiconductor layer.

Semiconductor memory device for suppressing variations of impurity concentrations

According to one embodiment, the array chip includes a three-dimensionally disposed plurality of memory cells and a memory-side interconnection layer connected to the memory cells. The circuit chip includes a substrate, a control circuit provided on the substrate, and a circuit-side interconnection layer provided on the control circuit and connected to the control circuit. The circuit chip is stuck to the array chip with the circuit-side interconnection layer facing to the memory-side interconnection layer. The bonding metal is provided between the memory-side interconnection layer and the circuit-side interconnection layer. The bonding metal is bonded to the memory-side interconnection layer and the circuit-side interconnection layer.

Semiconductor memory device having a circuit chip bonded to a memory array chip and including a solid-state drive controller and a control circuit

A nonvolatile semiconductor memory device that have a new structure are provided, in which memory cells are laminated in a three dimensional state so that the chip area may be reduced. The nonvolatile semiconductor memory device of the present invention is a nonvolatile semiconductor memory device that has a plurality of the memory strings, in which a plurality of electrically programmable memory cells is connected in series. The memory strings comprise a pillar shaped semiconductor; a first insulation film formed around the pillar shaped semiconductor; a charge storage layer formed around the first insulation film; the second insulation film formed around the charge storage layer; and first or nth electrodes formed around the second insulation film (n is natural number more than 1). The first or nth electrodes of the memory strings and the other first or nth electrodes of the memory strings are respectively the first or nth conductor layers that are spread in a two dimensional state.

Nonvolatile semiconductor memory device and manufacturing method thereof

A microelectronic device comprises a stack structure, pillar structures, a conductive plug structure, a sense transistor, and selector transistors. The stack structure comprises a vertically alternating sequence of conductive material and insulative material, and is divided into blocks separated by dielectric slot structures. The blocks individually include sub-blocks horizontally extending in parallel with one another. The pillar structures vertically extend through one of the blocks of the stack structure. Each pillar structure of a group of the pillar structures is positioned within a different one of the sub-blocks of the one of the blocks than each other pillar structure of the group. The conductive plug structure is coupled to multiple of the pillar structures of the group of the pillar structures. The sense transistor is gated by the conductive plug structure. The selector transistors couple the sense transistor to a read source line structure and a digit line structure.

Microelectronic devices, and related memory devices and electronic systems

A nonvolatile semiconductor memory device, includes: a stacked structural unit including a plurality of insulating films alternately stacked with a plurality of electrode films in a first direction; a selection gate electrode stacked on the stacked structural unit in the first direction; an insulating layer stacked on the selection gate electrode in the first direction; a first semiconductor pillar piercing the stacked structural unit, the selection gate electrode, and the insulating layer in the first direction, a first cross section of the first semiconductor pillar having an annular configuration, the first cross section being cut in a plane orthogonal to the first direction; a first core unit buried in an inner side of the first semiconductor pillar, the first core unit being recessed from an upper face of the insulating layer; and a first conducting layer of the first semiconductor pillar provided on the first core unit to contact the first core unit.

Nonvolatile semiconductor memory device and method for manufacturing same

According to an embodiment, a non-volatile memory device includes first electrodes stacked on an underlying layer, a second electrode provided on the first electrodes, a semiconductor layer extending in a first direction from the underlying layer to the second electrode, and a memory film provided between each of the first electrodes and the semiconductor layer. The semiconductor layer includes a first portion adjacent to the first electrodes and a second portion adjacent to the second electrode. The second portion has a thickness thinner than a thickness of the first portion in a second direction perpendicular to the first direction.

Non-volatile memory device

Microelectronic devices include a stack structure comprising a vertically alternating sequence of insulative structures and conductive structures arranged in tiers. A series of pillars extends through the stack structure. At least one isolation structure extends through an upper stack portion of the stack structure. The at least one isolation structure protrudes into pillars of neighboring columns of pillars of the series of pillars. Conductive contacts are in electrical communication with the pillars into which the at least one isolation structure protrudes. Related methods and electronic systems are also disclosed.

Microelectronic devices including pillars with partially-circular upper portions and circular lower portions, and related methods

Semiconductor memory device having a contact plug electrically connected to an interconnection through a narrower via

According to one embodiment, a nonvolatile semiconductor memory device includes a substrate, a stacked body, a semiconductor pillar, a charge storage film, and a drive circuit. The stacked body is provided on the substrate. The stacked body includes a plurality of insulating films alternately stacked with a plurality of electrode films. A through-hole is made in the stacked body to align in a stacking direction. The semiconductor pillar is buried in an interior of the through-hole. The charge storage film is provided between the electrode film and the semiconductor pillar. The drive circuit supplies a potential to the electrode film. The diameter of the through-hole differs by a position in the stacking direction. The drive circuit supplies a potential to reduce a potential difference with the semiconductor pillar as a diameter of the through-hole piercing the electrode film decreases.

Nonvolatile semiconductor memory device and method for driving same

An electronic device comprising multilevel bitlines comprising first bitlines and second bitlines. The first bitlines and the second bitlines are positioned at different levels. Pillar contacts are electrically connected to the first bitlines and to the second bitlines. Level 1 contacts are electrically connected to the first bitlines and level 2 contacts are electrically connected to the second bitlines. A liner is between the first bitlines and the level 2 contacts. Each bitline of the first bitlines is electrically connected to a single pillar contact in a subblock adjacent to the level 1 contacts and each bitline of the second bitlines is electrically connected to a single pillar contact adjacent to the level 2 contacts. Methods of forming an electronic device and related systems are also disclosed.

Electronic devices comprising multilevel bitlines, and related methods and systems

According to an embodiment, a non-volatile memory device includes a first conductive layer, electrodes, an interconnection layer and at least one semiconductor layer. The electrodes are arranged between the first conductive layer and the interconnection layer in a first direction perpendicular to the first conductive layer. The interconnection layer includes a first interconnection and a second interconnection. The semiconductor layer extends through the electrodes in the first direction, and is electrically connected to the first conductive layer and the first interconnection. The device further includes a memory film between each of the electrodes and the semiconductor layer, and a conductive body extending in the first direction. The conductive body electrically connects the first conductive layer and the second interconnection, and includes a first portion and a second portion connected to the second interconnection. The second portion has a width wider than the first portion.

Non-volatile memory device including a contour of an insulation film, located below a vertically oriented embedded body, having expanded portion corresponding to the second semicondutor portion of the lower structure

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Yokohama, Japan

Yoshiaki Fukuzumi