The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
Dec. 22, 2021
Kioxia Corporation, Tokyo, JP;
Takayuki Maruyama, Yokkaichi, JP;
Yoshiaki Fukuzumi, Yokkaichi, JP;
Yuki Sugiura, Yokkaichi, JP;
Shinya Arai, Yokkaichi, JP;
Fumie Kikushima, Yokkaichi, JP;
Keisuke Suda, Yokkaichi, JP;
Takashi Ishida, Yokkaichi, JP;
KIOXIA CORPORATION, Tokyo, JP;
Abstract
A semiconductor memory device includes a plurality of electrode layers stacked above a first semiconductor layer, a second semiconductor layer and a first film. The second semiconductor layer extends through the plurality of electrode layers in a stacking direction of the plurality of electrode layers. The second semiconductor layer includes an end portion inside the first semiconductor layer. The first film is positioned inside the first semiconductor layer and contacts the first semiconductor layer. The first semiconductor layer includes a first portion, a second portion, and a third portion. The first film is positioned between the first portion and the second portion. The third portion links the first portion and the second portion. The third portion is positioned between the first film and the second semiconductor layer. The second semiconductor layer includes a contact portion contacting the third portion of the first semiconductor layer.