The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2024
Filed:
Mar. 18, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chia-Hao Pao, Kaohsiung, TW;
Kian-Long Lim, Hsinchu, TW;
Chih-Chuan Yang, Hsinchu, TW;
Jui-Wen Chang, Hsinchu, TW;
Chao-Yuan Chang, New Taipei, TW;
Feng-Ming Chang, Zhubei, TW;
Lien-Jung Hung, Taipei, TW;
Ping-Wei Wang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A memory device is provided. The memory device includes a memory cell array having a plurality of memory cells arranged in a matrix of a plurality of rows and a plurality of columns. Each of the plurality of columns include a first plurality of memory cells connected to a first bit line and a second bit line. A pre-charge circuit is connected to the memory cell array. The pre-charge circuit pre-charges each of the first bit line and the second bit line from a first end. A pre-charge assist circuit is connected to the memory cell array. The pre-charge assist circuit pre-charges each of the first bit line and the second bit line from a second end, the second end being opposite the first end.