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For the Inventor, By the Inventor

Taipei, Taiwan

Chao-Yuan Chang

USPTO Granted Patents = 12 

Average Co-Inventor Count = 4.9

ph-index = 1

Forward Citations = 2(Granted Patents)


Location History:

  • Hsinchu, TW (2021 - 2023)
  • New Taipei, TW (2021 - 2024)

Company Filing History:

goldMedal12 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2021-2025

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12 patents (USPTO):
1. 12369294 - Multi-gate device and related methods (2025-07-22),
2. 12349330 - Shared pick-up regions for memory devices (2025-07-01),
3. 12219747 - Memory active region layout for improving memory performance (2025-02-04),
4. 12190943 - SRAM devices with reduced coupling capacitance (2025-01-07),
5. 12080342 - Static random access memory (SRAM) with a pre- charge assist circuit (2024-09-03),
6. 11984400 - Method of fabricating a semiconductor device including multiple contacts (2024-05-14),
7. 11968817 - Source/drain contact having a protruding segment (2024-04-23),
8. 11682451 - SRAM devices with reduced coupling capacitance (2023-06-20),
9. 11264393 - Source/drain contact having a protruding segment (2022-03-01),
10. 11121078 - SRAM having irregularly shaped metal lines (2021-09-14),
11. 11114153 - SRAM devices with reduced coupling capacitance (2021-09-07),
12. 11031336 - Semiconductor memory device having contact element of rectangular shape (2021-06-08),

Title: Innovations of Chao-Yuan Chang

Introduction

Chao-Yuan Chang is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 12 patents. His work focuses on advanced methods and structures that enhance the performance and efficiency of memory devices.

Latest Patents

One of his latest patents is titled "Multi-gate device and related methods." This invention involves a method that includes providing a substrate with an epitaxial stack of layers, which consists of multiple semiconductor channel layers interposed by dummy layers. The process includes an etch operation to create a trench in the substrate, allowing for the formation of an epitaxial layer that is level with the existing stack of layers. Another notable patent is "Shared pick-up regions for memory devices." This patent describes a memory structure that includes a memory cell array with n-type wells and a pick-up region that is electrically coupled to enhance the functionality of memory devices.

Career Highlights

Chao-Yuan Chang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His innovative work has positioned him as a key figure in the development of advanced semiconductor technologies.

Collaborations

He has collaborated with notable coworkers, including Feng-Ming Chang and Jui-Lin Chen, contributing to various projects that push the boundaries of semiconductor research and development.

Conclusion

Chao-Yuan Chang's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the industry. His work continues to impact the advancement of memory devices and semiconductor applications.

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