The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2022
Filed:
Jan. 29, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Jui-Lin Chen, Taipei, TW;
Chao-Yuan Chang, New Taipei, TW;
Ping-Wei Wang, Hsin-Chu, TW;
Fu-Kai Yang, Hsinchu, TW;
Ting Fang, Kaohsiung, TW;
I-Wen Wu, Hsinchu, TW;
Shih-Hao Lin, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a fin structure. A source/drain region is formed on the fin structure. A first gate structure is disposed over the fin structure. A source/drain contact is disposed over the source/drain region. The source/drain contact has a protruding segment that protrudes at least partially over the first gate structure. The source/drain contact electrically couples together the source/drain region and the first gate structure.