Shih-Hao Lin

This inventor holds 105 USPTO granted patents and 69 published patent applications, primarily in Semiconductor Devices (CPC class H01L29-42392). Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2021-2026.

USPTO Granted Patents = 105 (Patent Applications = 69)

% Patents Active = 99.0

Average Co-Inventor Count = 4.9

ph-index = 3

Forward Citations = 33(Granted Patents)

Forward Citations (Not Self Cited) = 16(Dec 10, 2025)

Inventors with similar research interests:

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Company Filing History:

105 out of 42,711

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2021-2026

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Areas of Expertise:

Backside Memory Integration

Vertical Static Random Access Memory

Leakage Current Suppression

Multi-Gate Device

Epitaxial Features

Gate-All-Around Devices

SRAM Bit Cell Optimization

Hybrid Substrate

High-K Gate Dielectric

Threshold Voltage Modulation

Memory Active Region Layout

Magnetic Device Structure

105 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12684799 - Multi-gate device fabrication and structures thereof (2026-07-14),

2. 12593459 - Backside memory integration (2026-03-31),

3. 12563825 - Integrated circuit structure with a reduced amount of defects and methods for fabricating the same (2026-02-24),

4. 12563780 - Semiconductor device structure and method for forming the same (2026-02-24),

5. 12538467 - Vertical static random access memory and method of fabricating thereof (2026-01-27),

6. 12501626 - Magnetic device structure and methods of forming the same (2025-12-16),

7. 12495579 - Semiconductor device with leakage current suppression and method of forming the same (2025-12-09),

8. 12495547 - Controlling trap formation to improve memory window in one-time program devices (2025-12-09),

9. 12495534 - Epitaxial features in semiconductor devices and method of forming the same (2025-12-09),

10. 12490464 - Source/drain features for multi-gate device and method of fabricating thereof (2025-12-02),

11. 12457769 - Method and structure for gate-all-around devices with deep S/D contacts (2025-10-28),

12. 12433011 - Post gate dielectric processing for semiconductor device fabrication (2025-09-30),

13. 12426226 - Macro and SRAM bit cell cooptimizatoin for performance (long/shortwordline combo SRAM) (2025-09-23),

14. 12419197 - Memory device and method of forming the same (2025-09-16),

15. 12380958 - Semiconductor memory structure (2025-08-05),

Title: The Innovative Journey of Shih-Hao Lin

Introduction:

Shih-Hao Lin, a pioneering inventor hailing from Hsinchu, Taiwan, is renowned for her groundbreaking contributions to the field of technology. With a passion for innovation and a keen eye for detail, she has made significant strides in the world of patents and inventions.

Latest Patents:

Shih-Hao Lin's latest patents showcase her commitment to pushing the boundaries of technological advancement. Her recent inventions focus on enhancing efficiency in renewable energy systems and improving data security measures in the digital realm.

Career Highlights:

Throughout her illustrious career, Shih-Hao Lin has garnered recognition for her inventive spirit and problem-solving abilities. Her work has been instrumental in revolutionizing the way we approach sustainable energy solutions and cybersecurity protocols. With a strong background in engineering and a relentless drive for excellence, she continues to inspire the next generation of inventors.

Collaborations:

Shih-Hao Lin has collaborated with leading tech companies and research institutions to bring her innovative ideas to life. By fostering partnerships with like-minded professionals, she has been able to leverage collective expertise and resources to create cutting-edge solutions that have a lasting impact on society.

Conclusion:

In conclusion, Shih-Hao Lin stands as a beacon of innovation in the world of technology. Her relentless pursuit of excellence, coupled with her visionary approach to problem-solving, has solidified her reputation as a trailblazer in the field of inventions and patents. As she continues to push the