The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2026

Filed:

Aug. 16, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Hsin-Wen Su, Yunlin County, TW;

Jui-Lin Chen, Taipei City, TW;

Shih-Hao Lin, Hsinchu City, TW;

Ming-Yen Chuang, Hsinchu City, TW;

Chenchen Jacob Wang, Hsinchu, TW;

Lien-Jung Hung, Taipei, TW;

Ping-Wei Wang, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10B 61/00 (2023.01); H10D 30/01 (2025.01); H10D 62/10 (2025.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
H10B 61/22 (2023.02); H10D 30/031 (2025.01); H10D 30/6713 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/118 (2025.01); H10N 50/01 (2023.02); H10N 50/80 (2023.02);
Abstract

Semiconductor structures and methods of the forming the same are provided. A semiconductor structure includes a source feature and a drain feature, an active region between the source feature and the drain feature, a gate structure over the active region, a frontside interconnect structure disposed over the source feature, the drain feature, and the gate structure, a backside interconnect structure disposed below the source feature, the drain feature, and the gate structure, and a storage element disposed in the backside interconnect structure.


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