The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2025
Filed:
Jun. 04, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chih-Chuan Yang, Hsinchu, TW;
Wen-Chun Keng, Hsinchu County, TW;
Shih-Hao Lin, Hsinchu, TW;
Hsin-Wen Su, Hsinchu, TW;
Yu-Kuan Lin, Taipei, TW;
Ping-Wei Wang, Hsin-Chu, TW;
Jing-Yi Lin, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method includes forming a first fin protruding from a substrate in a first region of the substrate and a second fin protruding from the substrate in a second region of the substrate, recessing a portion of the first fin, thereby forming a first recess, recessing a portion of the second fin, thereby forming a second recess, depositing a blocking layer in the second recess, growing a base epitaxial layer in the first recess, removing the blocking layer from the second recess, and growing a doped epitaxial layer in the first recess and the second recess. The base epitaxial layer is dopant free. The doped epitaxial layer abuts the first fin in the first region and the second fin in the second region.