Taipei, Taiwan

Yu-Kuan Lin

This inventor holds 79 USPTO granted patents and 6 published patent applications, primarily in Semiconductor Memory (CPC class H01L). Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Google Inc.. Active years: 2010-2025.

USPTO Granted Patents = 79 

% Patents Active = 96.2

Average Co-Inventor Count = 4.5

ph-index = 7

Forward Citations = 147(Granted Patents)

Forward Citations (Not Self Cited) = 123(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Taipei County, TW (2014)
  • Jhonghe, TW (2013 - 2015)
  • Mountain View, CA (US) (2015 - 2020)
  • Taipei, TW (2010 - 2024)
  • Hsinchu, TW (2022 - 2024)

Company Filing History:


Years Active: 2010-2025

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Areas of Expertise:
SRAM Structures
Memory Device
High-K Dielectric
FinFET Device
Magnetic Tunnel Junction
Integrated Circuit
Gate-All-Around
Electrical Connection
Trap Formation
Semiconductor Device
Performance Optimization
Latch-Up Suppression
79 patents (USPTO):Explore Patents

Title: **Yu-Kuan Lin: Innovator in Memory Device Technology**

Introduction

Yu-Kuan Lin is a distinguished inventor based in Taipei, Taiwan, with an impressive portfolio of 65 patents. His innovative contributions primarily revolve around memory devices and multigate technology, showcasing his propensity for advancing semiconductor engineering.

Latest Patents

Among Yu-Kuan Lin’s latest patents, one noteworthy invention is the "Memory device and method for forming the same." This patent describes a memory device that incorporates a substrate, first and second semiconductor fins, first and second gate structures, and respective gate spacers. A defining feature of this device is the design of the first gate structure, which crosses the first semiconductor fin and extends continuously from the second gate structure, creating a top view where the first gate structure's width is greater than that of the second gate structure.

Another prominent patent is the "Structure and method for multigate devices with suppressed diffusion." This method involves creating a fin composed of alternating layers of semiconductors, forming a gate stack, and strategically etching within a source/drain region to develop a source/drain trench. The innovative approach includes recessing semiconductor layers and epitaxially growing a source/drain feature, leading to advancements in the efficiency and performance of multigate devices.

Career Highlights

Yu-Kuan Lin has made significant strides in his career, having worked with renowned companies such as Taiwan Semiconductor Manufacturing Company Ltd. and Google Inc. His expertise in semiconductor technology and innovation has landed him pivotal roles in these leading organizations, where he has influenced the development and advancement of cutting-edge technologies.

Collaborations

Throughout his career, Yu-Kuan Lin has collaborated with esteemed colleagues, including Ping-Wei Wang and Chang-Ta Yang. These partnerships have facilitated the exchange of ideas and technological advancements, further enhancing the development of innovative semiconductor solutions.

Conclusion

Yu-Kuan Lin embodies the spirit of innovation, with his extensive patent portfolio and dedication to advancing technology in memory devices and multigate systems. His work continues to inspire and influence the semiconductor industry, establishing him as a leading figure in the realm of inventions and innovations.

Profile summary based on public USPTO records.
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