The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2025
Filed:
Aug. 30, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A device includes a substrate, a contact, a first gate, a second gate, a dielectric feature between the gates, a via, and a conductive line. The gates are each adjacent the contact and aligned lengthwise with each other along a first direction. A first sidewall of the dielectric feature defines an end-wall of the first gate. A second sidewall of the dielectric feature defines an end-wall of the second gate. The conductive line extends along a second direction. A projection of the conductive line onto a top surface of the dielectric feature passes between the first and second sidewalls. The via interfaces with the contact along a second plane. The via has a first dimension on the second plane along the second direction; the contact has a second dimension on the second plane along the second direction. The first dimension is greater than the second dimension.