The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2025

Filed:

Jun. 30, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Hsin-Wen Su, Dounan Township, TW;

Lien Jung Hung, Taipei, TW;

Ping-Wei Wang, Hsin-Chu, TW;

Yu-Kuan Lin, Taipei, TW;

Shih-Hao Lin, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 20/25 (2023.01); G11C 17/14 (2006.01); H01L 23/525 (2006.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10B 20/25 (2023.02); G11C 17/146 (2013.01); H01L 23/5252 (2013.01); H10D 64/017 (2025.01); H10D 84/0144 (2025.01); H10D 84/038 (2025.01);
Abstract

In some embodiments, the present disclosure relates to a one-time program (OTP) memory cell. The OTP memory cell includes a read transistor and a program transistor neighboring the read transistor. The read transistor includes a read dielectric layer and a read gate electrode overlying the read dielectric layer. The program transistor includes a program dielectric layer and a program gate electrode overlying the program dielectric layer. The program transistor has a smaller breakdown voltage than the read transistor.


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