The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Jan. 13, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Hsin-Wen Su, Yunlin County, TW;
Chih-Chuan Yang, Tainan, TW;
Shih-Hao Lin, Hsinchu, TW;
Yu-Kuan Lin, Taipei, TW;
Lien-Jung Hung, Taipei, TW;
Ping-Wei Wang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method includes forming a first semiconductor fin and a second semiconductor fin over a substrate; forming a first gate structure over the substrate and crossing the first semiconductor fin; forming a second gate structure over the substrate and crossing the second semiconductor fin; forming a first gate spacer on a sidewall of the first gate structure; and forming a second gate spacer on a sidewall of the second gate structure, wherein in a top view, an outer sidewall of the first gate spacer farthest from the first gate structure is coterminous with an outer sidewall of the second gate spacer farthest from the second gate structure, and an inner sidewall of the first gate spacer in contact with the first gate structure is misaligned with an inner sidewall of the second gate spacer in contact with the second gate structure.