The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 14, 2021

Filed:

Sep. 17, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Jui-Lin Chen, Taipei, TW;

Chao-Yuan Chang, Hsinchu, TW;

Yu-Kuan Lin, Taipei, TW;

Chang-Ta Yang, Hsinchu, TW;

Ping-Wei Wang, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); G11C 5/06 (2006.01); H01L 29/78 (2006.01); H01L 27/11 (2006.01); H01L 27/092 (2006.01); G06F 30/394 (2020.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); G06F 30/394 (2020.01); G11C 5/063 (2013.01); H01L 27/0924 (2013.01); H01L 27/1104 (2013.01); H01L 29/785 (2013.01);
Abstract

A semiconductor device includes a gate structure, a source/drain, a first via that is disposed over the gate structure and the source/drain, and a first metal line having a more elevated vertical position than the first via in a cross-sectional view. The first via is electrically coupled to both the gate structure and the source/drain. The first metal line and the first via each extends in a first direction. A first distance separates the metal line from the via in a second direction different from the first direction. The first metal line includes a protruding portion that protrudes outwardly in the second direction.


Find Patent Forward Citations

Chen, Jui-Lin. (2021). Sram having irregularly shaped metal lines (U.S. Patent No. 11121078). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11121078

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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