Hsinchu, Taiwan

Chang-Ta Yang

This inventor holds 40 USPTO granted patents and 8 published patent applications, primarily in Semiconductor Memory. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2005-2026.

USPTO Granted Patents = 40 

% Patents Active = 92.5

Average Co-Inventor Count = 3.8

ph-index = 5

Forward Citations = 477(Granted Patents)


Company Filing History:


Years Active: 2005-2026

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Areas of Expertise:
SRAM Cell
FinFET Devices
Semiconductor Memory
Memory Macro Performance
Electrical Connections
Static Random Access Memory
Patterning Technology
Vertical FET Devices
Device Manufacturing
Well Isolation
Compact SRAM Cell
40 patents (USPTO):Explore Patents

Title: **Chang-Ta Yang: A Pioneer in Semiconductor Innovations**

Introduction

Chang-Ta Yang is an esteemed inventor based in Hsinchu, Taiwan. With an impressive portfolio of 35 patents, he has made significant contributions to the field of semiconductor technology, particularly through his work at Taiwan Semiconductor Manufacturing Company Limited. His innovative approaches have propelled advancements in memory macro designs and fin structure semiconductor devices.

Latest Patents

Among his latest inventions is a patent detailing a **cut metal gate in memory macro edge and middle strap**. This semiconductor device features a memory macro that incorporates a middle strap area situated between the memory bit areas. Within this design, n-type and p-type wells are alternately positioned along a first direction, ensuring effective separation and functionality. A crucial aspect of the memory macro is the first dielectric layer, which extends along the second direction, acting as a critical component in maintaining the integrity of the well boundaries.

Another notable patent includes a **semiconductor device with fin structures**. This innovative structure consists of a substrate with first and second fin structures, each differing in height. Featuring a semiconductor element on each fin, this design enhances the functional performance ratios between components while optimizing space on the substrate.

Career Highlights

Chang-Ta Yang has established a remarkable career at Taiwan Semiconductor Manufacturing Company Limited, where he is recognized for his decisive role in advancing semiconductor technologies. His extensive portfolio of patents reflects his ability to merge theoretical knowledge with practical application, leading to enhanced device performance.

Collaborations

Throughout his career, Chang-Ta has collaborated with prominent colleagues such as Ping-Wei Wang and Yu-Kuan Lin. These partnerships have facilitated the exchange of ideas and fostered an environment of innovation, driving the development of cutting-edge semiconductor designs.

Conclusion

In summary, Chang-Ta Yang's contributions to the semiconductor industry through his 35 patents exhibit his dedication to innovation and excellence. His work not only enhances technological understanding but also significantly impacts the functionality and efficiency of semiconductor devices. As he continues to develop new ideas, the future of semiconductor technology looks promising, thanks to inventors like Chang-Ta Yang.

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