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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12057505 B1

PDFFull Text
Date of Patent:
Aug. 06, 2024

Filed:

Jul. 05, 2021

Semiconductor device having fin structures

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yu-Kuan Lin, Taipei, TW;

Chang-Ta Yang, Hsinchu, TW;

Ping-Wei Wang, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

McClure, Qualey & Rodack, LLP

Primary Examiner:

Karen Kusumakar

Assistant Examiner:

Adam S Bowen

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/308 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 21/0228 (2013.01); H01L 21/3083 (2013.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01); H01L 29/0649 (2013.01); H01L 29/4232 (2013.01); H01L 29/66545 (2013.01); H01L 29/6681 (2013.01);
Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a first well region and a second well region and a first fin structure formed in a first region of the first well region. The semiconductor device structure also includes a second fin structure formed in a second region of the first well region. In addition, the second fin structure is narrower than the first fin structure. The semiconductor device structure also includes a third fin structure formed in a first region of the second well region. In addition, a sidewall of the first fin structure is substantially aligned with a sidewall of the third fin structure.

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