The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 25, 2023

Filed:

Mar. 08, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company., Ltd., Hsinchu, TW;

Inventors:

Wen-Chun Keng, Hsinchu County, TW;

Yu-Kuan Lin, Taipei, TW;

Chang-Ta Yang, Hsinchu, TW;

Ping-Wei Wang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/08 (2006.01); H01L 21/311 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823468 (2013.01); H01L 27/0886 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 29/0847 (2013.01);
Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a first fin structure, a second fin structure, and a third fin structure over the semiconductor substrate. The semiconductor device structure also includes a merged semiconductor element on the first fin structure and the second fin structure and an isolated semiconductor element on the third fin structure. The semiconductor device structure further includes an isolation feature over the semiconductor substrate and partially or completely surrounding the first fin structure, the second fin structure, and the third fin structure. A top surface of the first fin structure is below a top surface of the isolation feature, and a top surface of the third fin structure is above the top surface of the isolation feature.


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