The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2024

Filed:

Jun. 08, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company., Ltd., Hsinchu, TW;

Inventors:

Wen-Chun Keng, Hsinchu County, TW;

Yu-Kuan Lin, Taipei, TW;

Chang-Ta Yang, Hsinchu, TW;

Ping-Wei Wang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823468 (2013.01); H01L 27/0886 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 29/0847 (2013.01);
Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a first fin structure and a second fin structure over the substrate. A top surface of the first fin structure and a top surface of the second fin structure are at different height levels. The semiconductor device structure also includes a first semiconductor element on the first fin structure and a second semiconductor element on the second fin structure. The first semiconductor element is wider than the second semiconductor element, and the first semiconductor element is closer to the substrate than the second semiconductor element.


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