The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2024
Filed:
Jun. 02, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Jordan Hsu, New Taipei, TW;
Yu-Kuan Lin, Taipei, TW;
Shau-Wei Lu, Taoyuan, TW;
Chang-Ta Yang, Hsinchu, TW;
Ping-Wei Wang, Hsinchu, TW;
Kuo-Hung Lo, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A static random access memory (SRAM) cell includes substrate, a first semiconductor fin, a first gate structure, a second semiconductor fin, and a second gate structure. The substrate has a first p-well and an n-well bordering the first p-well. The first semiconductor fin extends within the first p-well. The first gate structure extends across the first semiconductor fin and forms a first write-port pull-down transistor with the first semiconductor fin. The second semiconductor fin extends within the n-well. The second gate structure extends across the second semiconductor fin and forms a first write-port pull-up transistor with the second semiconductor fin. A channel region of the first write-port pull-down transistor has a higher doping concentration than a channel region of the first write-port pull-up transistor.