The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2025

Filed:

Jun. 16, 2023
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chao-Yuan Chang, Hsinchu, TW;

Feng-Ming Chang, Hsinchu, TW;

Jui-Lin Chen, Hsinchu, TW;

Kian-Long Lim, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/412 (2006.01); G11C 11/419 (2006.01); H10B 10/00 (2023.01);
U.S. Cl.
CPC ...
G11C 11/412 (2013.01); G11C 11/419 (2013.01); H10B 10/12 (2023.02); H10B 10/18 (2023.02);
Abstract

The current disclosure is directed to a SRAM bit cell having a reduced coupling capacitance. In a vertical direction, a wordline 'WL' and a bitline “BL” of the SRAM cell are stacked further away from one another to reduce the coupling capacitance between the WL and the BL. In an embodiment, the WL is vertically spaced apart from the BL with one or more metallization level that none of the WL or the BL is formed from. Connection island structures or jumper structures are provided to connect the upper one of the WL or the BL to the transistors of the SRAM cell.


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