The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 18, 2025

Filed:

Aug. 30, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Ruey-Wen Chang, Hsinchu, TW;

Feng-Ming Chang, Hsinchu County, TW;

Ping-Wei Wang, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 10/00 (2023.01); G11C 11/412 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H10B 10/12 (2023.02); G11C 11/412 (2013.01); H01L 27/0924 (2013.01);
Abstract

A static random-access memory (SRAM) structure and the manufacturing method thereof are disclosed. An exemplary SRAM structure includes a first source/drain (S/D) feature and a second S/D feature formed in an interlayer dielectric layer (ILD) of a bit cell region of the SRAM structure, a frontside via electrically connecting to the first S/D feature, and a first backside via electrically connecting to the second S/D feature. The first S/D feature and the second S/D feature are of a same type.


Find Patent Forward Citations

Loading…