The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2025
Filed:
May. 05, 2023
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 10/00 (2023.01); G11C 11/412 (2006.01); G11C 11/419 (2006.01);
U.S. Cl.
CPC ...
H10B 10/12 (2023.02); G11C 11/412 (2013.01); G11C 11/419 (2013.01);
Abstract
A static random access memory device is provided and includes a first gate of a first pass-gate transistor extending to cross a first number of fins in a first threshold voltage region of a substrate and a second gate of a second pass-gate transistor extending to cross a second number of fins in a second threshold voltage region of a substrate. A boundary of the first threshold voltage region between the first and second gates is arranged closer to one, which crosses a smaller number of fins, of the first and second gates.