The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2022

Filed:

Aug. 17, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Gulbagh Singh, Uttar Pradesh, IN;

Shun-Chi Tsai, Tainan, TW;

Chih-Ming Lee, Tainan, TW;

Chi-Yen Lin, Tainan, TW;

Kuo-Hung Lo, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 21/8234 (2006.01); G11C 11/412 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1104 (2013.01); H01L 21/823475 (2013.01); H01L 29/0649 (2013.01); H01L 29/4238 (2013.01); G11C 11/412 (2013.01); H01L 27/0207 (2013.01);
Abstract

An SRAM structure includes first and second gate strips extending along a first direction. A first active region extends across the first gate strip from a top view, and forms a first pull-up transistor with the first gate strip. A second active region extends across the second gate strip from the top view, and forms a second pull-up transistor with the second gate strip. From the top view the first active region has a first stepped sidewall facing away from the second active region. The first stepped sidewall has a first side surface farthest from the second active region, a second side surface set back from the first side surface along the first direction, and a third side surface set back from the second side surface along the first direction.


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