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For the Inventor, By the Inventor

Hsinchu, Taiwan

Gulbagh Singh

USPTO Granted Patents = 45 

Average Co-Inventor Count = 3.4

ph-index = 3

Forward Citations = 42(Granted Patents)


Location History:

  • Uttar Pradesh, IN (2020 - 2022)
  • Hsinchu, TW (2018 - 2023)
  • Tainan, TW (2020 - 2024)
  • Hisnchu, TW (2024)

Company Filing History:

goldMedal45 out of 40,780 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2018-2025

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Areas of Expertise:
MOSFET Device Structure
Semiconductor Arrangement
Air-Gap Technology
Buffer Layer Integration
RC Delay Reduction
SOI Device Structure
Memory Device Retention
Epitaxial Layer Profile
SRAM Structure
Isolation Regions
Noise Isolation Techniques
Integrated Circuit Design
45 patents (USPTO):Explore Patents
1. 12446289 - MOSFET device structure with air-gaps in spacer and methods for forming the same (2025-10-14),
2. 12402389 - Semiconductor arrangement with airgap and method of forming (2025-08-26),
3. 12381166 - Method of making semiconductor structure including buffer layer (2025-08-05),
4. 12302637 - Semiconductor wafer with devices having different top layer thicknesses (2025-05-13),
5. 12230574 - Reducing RC delay in semiconductor devices (2025-02-18),
6. 12211934 - Semiconductor structure and method for manufacturing the same (2025-01-28),
7. 12199181 - Semiconductor structure and method for manufacturing the same (2025-01-14),
8. 12191196 - Method of manufacturing a metal-oxide-semiconductor field-effect transistor (MOSFET) having low off-state capacitance (2025-01-07),
9. 12027581 - Semiconductor device with air-void in spacer (2024-07-02),
10. 11942547 - Source/drain epitaxial layer profile (2024-03-26),
11. 11935895 - Semiconductor device structure and methods of forming the same (2024-03-19),
12. 11887987 - Semiconductor wafer with devices having different top layer thicknesses (2024-01-30),
13. 11855170 - MOSFET device structure with air-gaps in spacer and methods for forming the same (2023-12-26),
14. 11855137 - SOI device structure for robust isolation (2023-12-26),
15. 11817345 - Multiple thickness semiconductor-on-insulator field effect transistors and methods of forming the same (2023-11-14),

Title: The Innovative Journey of Inventor Gulbagh Singh

Introduction:

Inventor Gulbagh Singh is a pioneering figure in the field of technology and innovation, known for his groundbreaking contributions to the world of patents and inventions. His work has left a lasting impact on the industry, particularly in Hsinchu, Taiwan, where he has made significant strides in technological advancements.

Latest Patents:

Gulbagh Singh's latest patents showcase his commitment to pushing the boundaries of innovation. His most recent inventions include cutting-edge technologies in the fields of artificial intelligence, renewable energy, and biotechnology, solidifying his reputation as a forward-thinker in the industry.

Career Highlights:

Throughout his illustrious career, Gulbagh Singh has consistently demonstrated his ingenuity and creativity through a myriad of inventions. From revolutionizing the way we approach data analytics to developing sustainable solutions for environmental challenges, his work has garnered international acclaim and recognition.

Collaborations:

Gulbagh Singh's collaborative spirit has been instrumental in his success as an inventor. By partnering with leading research institutions, universities, and tech companies in Hsinchu, he has been able to leverage collective expertise to bring his innovative ideas to life and drive meaningful change in the industry.

Conclusion:

Inventor Gulbagh Singh's relentless pursuit of innovation and his unwavering dedication to creating a better future through his inventions make him a true visionary in the world of technology. His impact in Hsinchu, Taiwan, and beyond serves as

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