The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2025
Filed:
Jul. 20, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Inventors:
Gulbagh Singh, Tainan, TW;
Wang Po-Jen, Taichung, TW;
Kun-Tsang Chuang, Miaoli, TW;
Tsung-Han Tsai, Zhunan Township, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/66 (2025.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/311 (2006.01); H01L 21/764 (2006.01); H10D 64/62 (2025.01); H10D 64/68 (2025.01);
U.S. Cl.
CPC ...
H10D 64/679 (2025.01); H01L 21/02167 (2013.01); H01L 21/28123 (2013.01); H01L 21/28518 (2013.01); H01L 21/31116 (2013.01); H01L 21/764 (2013.01); H10D 64/62 (2025.01); H10D 64/68 (2025.01);
Abstract
A semiconductor arrangement includes a gate structure disposed between a first source/drain region and a second source/drain region and a first contact disposed over the first source/drain region. The semiconductor arrangement includes a second contact disposed over the second source/drain region and an airgap disposed between the first contact and the second contact and over the gate structure.