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For the Inventor, By the Inventor

Miaoli, Taiwan

Kun-Tsang Chuang

USPTO Granted Patents = 52 

Average Co-Inventor Count = 3.6

ph-index = 3

Forward Citations = 44(Granted Patents)

Forward Citations (Not Self Cited) = 33(Oct 12, 2025)


Location History:

  • Mioli County, TW (2018)
  • Miaoli County, TW (2017 - 2022)
  • Miaoli, TW (2015 - 2024)
  • Hsinchu, TW (2022 - 2024)

Company Filing History:

goldMedal52 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2015-2025

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52 patents (USPTO):
1. 12446289 - MOSFET device structure with air-gaps in spacer and methods for forming the same (2025-10-14),
2. 12402389 - Semiconductor arrangement with airgap and method of forming (2025-08-26),
3. 12302637 - Semiconductor wafer with devices having different top layer thicknesses (2025-05-13),
4. 12230574 - Reducing RC delay in semiconductor devices (2025-02-18),
5. 12211934 - Semiconductor structure and method for manufacturing the same (2025-01-28),
6. 12199181 - Semiconductor structure and method for manufacturing the same (2025-01-14),
7. 12191196 - Method of manufacturing a metal-oxide-semiconductor field-effect transistor (MOSFET) having low off-state capacitance (2025-01-07),
8. 12027581 - Semiconductor device with air-void in spacer (2024-07-02),
9. 11942547 - Source/drain epitaxial layer profile (2024-03-26),
10. 11887987 - Semiconductor wafer with devices having different top layer thicknesses (2024-01-30),
11. 11855170 - MOSFET device structure with air-gaps in spacer and methods for forming the same (2023-12-26),
12. 11817345 - Multiple thickness semiconductor-on-insulator field effect transistors and methods of forming the same (2023-11-14),
13. 11804439 - Reducing RC delay in semiconductor devices (2023-10-31),
14. 11594449 - Method of making a semiconductor structure (2023-02-28),
15. 11476157 - Method of manufacturing a metal-oxide-semiconductor field-effect transistor (MOSFET) having low off-state capacitance due to reduction of off-state capacitance of back-end-of-line (BEOL) features of the MOSFET (2022-10-18),

Title: Kun-Tsang Chuang: A Luminary in Semiconductor Innovations

Introduction

Kun-Tsang Chuang is an esteemed inventor based in Miaoli, Taiwan, recognized for his profound contributions to the field of semiconductor technology. With an impressive portfolio consisting of 49 patents, Chuang has made significant strides in enhancing the performance and reliability of semiconductor devices.

Latest Patents

Among his latest innovations, Chuang has developed methods to reduce RC delay in semiconductor devices. This invention describes a comprehensive approach that involves forming a transistor structure on a substrate and integrating various dielectric layers to minimize delays that can hinder device performance. Another notable patent is a semiconductor structure and method for manufacturing the same, which outlines an advanced semiconductor device incorporating a unique arrangement of body and active regions to optimize functionality.

Career Highlights

Chuang is currently associated with Taiwan Semiconductor Manufacturing Company Ltd., a leading entity in the semiconductor industry. His work focuses on improving device efficiencies and developing cutting-edge solutions that address current technological challenges.

Collaborations

Throughout his career, Chuang has collaborated with talented professionals such as Gulbagh Singh and Hsin-Chi Chen. These partnerships have propelled the advancement of new technologies, emphasizing teamwork and shared innovation in the field of semiconductors.

Conclusion

Kun-Tsang Chuang's relentless pursuit of innovation is a testament to his dedication to advancing semiconductor technology. His extensive patent portfolio not only showcases his expertise but also highlights his impact on the industry. With a remarkable blend of creativity and technical prowess, Chuang continues to influence the evolution of semiconductor devices, paving the way for future advancements.

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