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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10748911 B1

PDFFull Text
Date of Patent:
Aug. 18, 2020

Filed:

Jun. 27, 2018

Integrated circuit for low power sram

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Gulbagh Singh, Uttar Pradesh, IN;

Shun-Chi Tsai, Tainan, TW;

Chih-Ming Lee, Tainan, TW;

Chi-Yen Lin, Tainan, TW;

Kuo-Hung Lo, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Maschoff Brennan

Primary Examiner:

Eric A Ward

Int. Cl.
CPC ...
H01L 27/11 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 21/8234 (2006.01); G11C 11/412 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1104 (2013.01); H01L 21/823475 (2013.01); H01L 29/0649 (2013.01); H01L 29/4238 (2013.01); G11C 11/412 (2013.01); H01L 27/0207 (2013.01);
Abstract

An integrated circuit structure includes a semiconductor substrate, an active area, a gate electrode, and a butted contact. The active area is oriented in a first direction and has at least one tooth portion extending in a second direction in the semiconductor substrate. The gate electrode overlies the active area and extends in the second direction. The butted contact has a first portion above the gate electrode and a second portion above the active area. A portion of the second portion of the butted contact lands on the tooth portion.

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