The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 07, 2023

Filed:

Mar. 18, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Gulbagh Singh, Hsinchu, TW;

Chih-Ming Lee, Hsinchu, TW;

Chi-Yen Lin, Hsinchu, TW;

Wen-Chang Kuo, Hsinchu, TW;

C. C. Liu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 29/06 (2006.01); H01L 23/522 (2006.01); H01L 23/58 (2006.01); H01L 23/528 (2006.01); H01L 21/78 (2006.01); H01L 23/532 (2006.01); G06F 30/392 (2020.01); G06F 30/398 (2020.01); H01L 23/544 (2006.01); H01L 23/31 (2006.01); H01L 21/66 (2006.01); H01L 23/525 (2006.01);
U.S. Cl.
CPC ...
H01L 24/06 (2013.01); G06F 30/392 (2020.01); G06F 30/398 (2020.01); H01L 21/78 (2013.01); H01L 23/522 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01); H01L 23/562 (2013.01); H01L 23/585 (2013.01); H01L 24/03 (2013.01); H01L 29/0649 (2013.01); H01L 22/34 (2013.01); H01L 23/3114 (2013.01); H01L 23/525 (2013.01); H01L 23/53214 (2013.01); H01L 23/53228 (2013.01); H01L 23/53233 (2013.01); H01L 23/53257 (2013.01); H01L 23/53261 (2013.01); H01L 23/544 (2013.01); H01L 2223/5446 (2013.01); H01L 2223/54426 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/02311 (2013.01); H01L 2224/02371 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/03464 (2013.01); H01L 2224/03614 (2013.01); H01L 2224/03827 (2013.01); H01L 2224/03848 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05111 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05144 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/061 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/2011 (2013.01); H01L 2924/20106 (2013.01); H01L 2924/20107 (2013.01); H01L 2924/20108 (2013.01); H01L 2924/20109 (2013.01); H01L 2924/3512 (2013.01); H01L 2924/35121 (2013.01);
Abstract

A semiconductor structure includes a first contact pad over an interconnect structure. The semiconductor structure further includes a second contact pad over the interconnect structure, wherein the second contact pad is electrically separated from the first contact pad. The semiconductor structure further includes a first buffer layer over the first contact pad, wherein the first buffer layer is partially over the second contact pad, and an edge of the second contact pad farthest from the first contact pad extends beyond the first buffer layer.


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