The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2020

Filed:

Dec. 24, 2018
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Gulbagh Singh, Hsinchu, TW;

Chih-Ming Lee, Tainan, TW;

Chi-Yen Lin, Tainan, TW;

Wen-Chang Kuo, Tainan, TW;

C. C. Liu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/00 (2006.01); H01L 23/00 (2006.01); H01L 23/522 (2006.01); H01L 23/58 (2006.01); H01L 23/528 (2006.01); H01L 21/78 (2006.01); H01L 29/06 (2006.01); H01L 23/532 (2006.01); G06F 30/392 (2020.01); G06F 30/398 (2020.01); H01L 23/544 (2006.01); H01L 23/31 (2006.01); H01L 21/66 (2006.01); H01L 23/525 (2006.01);
U.S. Cl.
CPC ...
H01L 24/06 (2013.01); G06F 30/392 (2020.01); G06F 30/398 (2020.01); H01L 21/78 (2013.01); H01L 23/522 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01); H01L 23/562 (2013.01); H01L 23/585 (2013.01); H01L 24/03 (2013.01); H01L 29/0649 (2013.01); H01L 22/34 (2013.01); H01L 23/3114 (2013.01); H01L 23/525 (2013.01); H01L 23/53214 (2013.01); H01L 23/53228 (2013.01); H01L 23/53233 (2013.01); H01L 23/53257 (2013.01); H01L 23/53261 (2013.01); H01L 23/544 (2013.01); H01L 2223/5446 (2013.01); H01L 2223/54426 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/02311 (2013.01); H01L 2224/02371 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/03464 (2013.01); H01L 2224/03614 (2013.01); H01L 2224/03827 (2013.01); H01L 2224/03848 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05111 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05144 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/061 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/2011 (2013.01); H01L 2924/20106 (2013.01); H01L 2924/20107 (2013.01); H01L 2924/20108 (2013.01); H01L 2924/20109 (2013.01); H01L 2924/3512 (2013.01); H01L 2924/35121 (2013.01);
Abstract

A semiconductor structure includes a first contact pad over a passivation layer, wherein the first contact pad is in a circuit region. The semiconductor structure further includes a plurality of second contact pads over the passivation layer, wherein each second contact pad of the plurality of second contact pads is in a non-circuit region. The semiconductor structure further includes a first buffer layer over the first contact pad and over a first second contact pad of the plurality of second contact pads. The semiconductor structure further includes a second buffer layer over the first buffer layer, the first contact pad, the first second contact pad and a portion of a second second contact pad of the plurality of second contact pads, wherein the second buffer layer exposes a portion of the second second contact pad of the plurality of second contact pads.


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